Performance of GaAs MESFET Mixers at X Band
نویسندگان
چکیده
A theoretical analysis and experimental verification of the signal properties of the GaAs MESFET mixer are presented. Experimental techniques for evaluating some of the mixer parameters are described. Experiments performed on GaAs MESFET mixers at X band show that good noise performance and large dynamic range can be achieved with conversion gain. A conversion gain over 6 dB is measured at 7.8 GHz. Noise figures as low as 7.4 dB and output third-order intermodulation intercepts of +18 dBm have heen obtained at 8 GHz with a balanced
منابع مشابه
Analytical model for I-V analysis of buried gate MESFET with modulation frequency characteristics
The analysis of frequency-dependent characteristics of an ion-implanted buried-gate GaAs MESFET, with front side illumination has made achieving improved performance in I-V characteristics possible. When photo energy falls on the device, flow of charge carriers changes corresponding to the change in wave length and frequency of incident light. It has been observed that the channel conductance a...
متن کاملId–Vd Output Characteristics and Transit-Time Model For Short-Gate Length Ion-Implanted GaAs MESFET Using MATLAB
-Two-dimensional analytical model for optically biased non-self-aligned and self-aligned short channel GaAs MESFETs is developed to show the photo effects on the Id–Vd characteristics. When light radiation having photon energy equal to or greater than the band gap energy of GaAs is allowed to fall, the drain current increases significantly as compared to dark condition due to photoconductive ef...
متن کاملTesting of a GaAs MESFET Static RAM
This paper describes the complete test, functional and parametric, of a 1Kb GaAs MESFET SRAM chip. The chip was developed as an evaluation vehicle for a new type of MESFET SRAM cell. The new cell, in contrast with conventional GaAs memory cells, minimizes the leakage current in access transistors of unselected cells. Two algorithms were selected for functional testing: MATS and Galloping Ones a...
متن کاملAnalytical Model for I-V Characteristics of Buried Gate MESFET
A theoretical model for the I-V characteristics of buried-gate GaAs metal semiconductor field-effect transistors has been developed by solving dc continuity equation. This analysis includes the ion implanted buried-gate process. It is shown that the currentvoltage could be rather increased when introducing an optical fiber to the buried-gate GaAs MESFETs structure. The current -voltage characte...
متن کاملCan Asynchronous Design Reduce Power Dissipation in GaAs ICs? R.P.Ribas and A.Guyot
Asynchronous design has been considered to avoid problems like high clock frequency generation and distribution, as well as high static power consumption in GaAs digital circuits. This paper discusses the real advantages of implementing such circuits with respect to feasibility, speed performance, power dissipation and ease of design migration from CMOS to GaAs while taking into account several...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره شماره
صفحات -
تاریخ انتشار 1998